Half-Terahertz SiGe BiCMOS technology
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- 1 January 2012
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 133-136
Abstract
This paper addresses the integration of a new generation of high-speed SiGe HBTs with f T / f max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.Keywords
This publication has 3 references indexed in Scilit:
- Towards THz SiGe HBTs2011
- A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 psIEEE Journal of Solid-State Circuits, 2010
- SiGe HBT module with 2.5 ps gate delay2008