A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
Authors:
- 23 August 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 45 (9) , 1678-1686
Abstract
A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages BV CEO of 1.7 V along with high-voltage HBTs ( f T = 50 GHz, f max = 130 GHz, BV CEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.Keywords
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