Impact of Capping Metal Work Function and Length on Electron Mobility in ZTO TFT

This publication has 12 references indexed in Scilit:

• Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors
  ACS Applied Electronic Materials, 2023
• Absolute work function measurement by using photoelectron spectroscopy
  Current Applied Physics, 2021
• Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
  Advanced Materials, 2021
• Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor
  Transactions on Electrical and Electronic Materials, 2020
• Printable Semiconductors for Backplane TFTs of Flexible OLED Displays
  Advanced Functional Materials, 2019
• Dependence of charge carrier injection on the interface energy barrier in short-channel polymeric field effect transistors
  Applied Physics Letters, 2012
• Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
  IEEE Electron Device Letters, 2011
• Atomic Layer Deposition: An Overview
  Chemical Reviews, 2009
• Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
  Organic Electronics, 2009
• Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
  Nature, 2004