Jinwoo Lee
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Jinwoo Lee has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Hyeongrok Jang
Department of Electrical and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
3 shared publications - Moonsuk Yi
Department of Electrical and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
3 shared publications - So-Young Bak
Department of Electrical and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
3 shared publications Se-Hyeong Lee
Department of Electrical and Electronics Engineering, Pusan National University, Busan, Republic of Korea
2 shared publications- Dongki Baek
Department of Electrical and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
1 shared publication Jaeseon Back
School of Electrical and Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
1 shared publication
Latest Publications
- 21 April 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (12) , 1-16
Enhanced CO gas-sensing using zinc oxide decorated with mixed-valence manganese oxide
- 21 April 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (12) , 1-16
Enhanced CO gas-sensing using zinc oxide decorated with mixed-valence manganese oxide
- Open Access
- 27 February 2025
- Published by The Materials Research Society of Korea in Korean Journal of Materials Research
- Vol. 35 (2) , 90-95
Impact of Capping Metal Work Function and Length on Electron Mobility in ZTO TFT
- 27 February 2025
- Published by The Materials Research Society of Korea in Korean Journal of Materials Research
- Vol. 35 (2) , 90-95
Open AccessImpact of Capping Metal Work Function and Length on Electron Mobility in ZTO TFT
- 9 October 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 71 (11) , 6788-6794
Aluminum Capping-Induced Enhancement of Electrical Performance and Stability in Zinc Tin Oxide Thin-Film Transistors via a Low-Resistance Electron Pathway
We present a ZnSnO (ZTO) thin-film transistor (TFT) with enhanced mobility, achieved through the incorporation of a metal-capping layer. The fabrication of the ZTO active layer involves the deposition of a ZnO incubation layer, followed by super cycles of depositing ZnO and SnO2 layers through atomic layer deposition (ALD). An additional 60-nm-thick Al layer between the source and drain serves as a metal-capping layer and forms a conductive region. Rich in free electrons and located in the back channel away from the gate insulator, the conductive region leads to a primary ON-current path, thereby improving electrical characteristics and stability. Thus, the Al-capped ZTO TFT with a capping length of$200~\mu $ m exhibits decent performance with a saturation mobility of 16.89 cm2/V$\cdot $ s, a threshold voltage of 0.81 V, a subthreshold swing (SS) of 0.59 V/dec, and an ON/OFF current ratio over 107. Moreover, it exhibits a minimal threshold voltage shift of 0.9 V in the positive bias test and −0.14 V in the negative bias stress test. On ALD-based ZTO TFTs, these results demonstrate the applicability of the Al-capping method, which successfully overcomes the tradeoff between mobility improvement and bias stability.- 9 October 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 71 (11) , 6788-6794
Aluminum Capping-Induced Enhancement of Electrical Performance and Stability in Zinc Tin Oxide Thin-Film Transistors via a Low-Resistance Electron Pathway
We present a ZnSnO (ZTO) thin-film transistor (TFT) with enhanced mobility, achieved through the incorporation of a metal-capping layer. The fabrication of the ZTO active layer involves the deposition of a ZnO incubation layer, followed by super cycles of depositing ZnO and SnO2 layers through atomic layer deposition (ALD). An additional 60-nm-thick Al layer between the source and drain serves as a metal-capping layer and forms a conductive region. Rich in free electrons and located in the back channel away from the gate insulator, the conductive region leads to a primary ON-current path, thereby improving electrical characteristics and stability. Thus, the Al-capped ZTO TFT with a capping length of$200~\mu $ m exhibits decent performance with a saturation mobility of 16.89 cm2/V$\cdot $ s, a threshold voltage of 0.81 V, a subthreshold swing (SS) of 0.59 V/dec, and an ON/OFF current ratio over 107. Moreover, it exhibits a minimal threshold voltage shift of 0.9 V in the positive bias test and −0.14 V in the negative bias stress test. On ALD-based ZTO TFTs, these results demonstrate the applicability of the Al-capping method, which successfully overcomes the tradeoff between mobility improvement and bias stability.- Open Access
- 18 April 2024
- Published by MDPI AG in Electronics
- Vol. 13 (8) , 1544
Control of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature
Ultra-thin ZnO thin-film transistors with a channel thickness of 2O3 thin-film transistor with a thickness of 6 nm and adjusted the threshold voltage and carrier mobility through the modulation of carrier generation by varying the growth temperature of Al2O3. As the growth temperature of Al2O3 increased, oxygen vacancies generated at the hetero–oxide interface increased, supplying a free carrier into the channel and causing the threshold voltage to shift in the negative direction. The optimized device, a ZnO/Al2O3 thin-film transistor with a growth temperature of 140 °C, exhibited a μsat of 12.26 cm2/V∙s, Vth of 8.16 V, SS of 0.65 V/decade, and ION/OFF of 3.98 × 106. X-ray photoelectron spectroscopy was performed to analyze the properties of ZnO/Al2O3 thin films.
- 18 April 2024
- Published by MDPI AG in Electronics
- Vol. 13 (8) , 1544
Open AccessControl of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature
Ultra-thin ZnO thin-film transistors with a channel thickness of 2O3 thin-film transistor with a thickness of 6 nm and adjusted the threshold voltage and carrier mobility through the modulation of carrier generation by varying the growth temperature of Al2O3. As the growth temperature of Al2O3 increased, oxygen vacancies generated at the hetero–oxide interface increased, supplying a free carrier into the channel and causing the threshold voltage to shift in the negative direction. The optimized device, a ZnO/Al2O3 thin-film transistor with a growth temperature of 140 °C, exhibited a μsat of 12.26 cm2/V∙s, Vth of 8.16 V, SS of 0.65 V/decade, and ION/OFF of 3.98 × 106. X-ray photoelectron spectroscopy was performed to analyze the properties of ZnO/Al2O3 thin films.