Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAs
Authors:
- 4 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (19) , 2074-2077
Abstract
Subpicosecond infrared pulses were used to study in GaAs at 15 K the spectral dependence of the absorption saturation around the excitation-pulse wavelength. The nonthermal part of the carrier energy distribution is found to peak at the excitation frequency. A line-shape analysis allows the determination of the electron-hole-pair dephasing time.Keywords
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