Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Authors:
- P. PailletPPP. Paillet
- O. MusseauOMO. Musseau
- J.L. LerayJLJ.L. Leray
- O. FaynotOFO. Faynot
- C. RaynaudCRC. Raynaud
- J.L. PelloieJPJ.L. Pelloie
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (3) , 613-619
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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