Dielectric Characteristics of Pb(Zr, Ti)O3Films on MgO Single Crystal Substrate by Terahertz Time Domain Spectroscopy
Authors:
- 1 January 2011
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 422 (1) , 19-22
Abstract
Lead zirconium titanate (PbZr0.52Ti0.48 O3 and PbZr0.30Ti0.70O3) films were prepared on MgO (100) substrate by the sol-gel method. Film Thickness, microstructure and crystalline structure of the films were investigated by scanning electron microscope (SEM) and X-ray diffraction analysis, respectively. Terahertz time-domain spectroscopy has been used to investigate the dielectric properties of ferroelectric Pb(Zr, Ti)O3 thin films in the frequency range of 0.2 to 2.0 THz.Keywords
This publication has 8 references indexed in Scilit:
- Optical and Dielectric Properties of Chalcogenide Glasses at Terahertz FrequenciesETRI Journal, 2009
- The design, fabrication and evaluation of a MEMS PZT cantilever with an integrated Si proof mass for vibration energy harvestingJournal of Micromechanics and Microengineering, 2008
- Terahertz response of GaN thin filmsOptics Express, 2006
- MICROWAVE PROPERTIES OF TUNABLE PHASE SHIFTER USING SUPERCONDUCTOR/FERROELECTRIC THIN FILMSIntegrated Ferroelectrics, 2005
- Measurement of Microwave Dielectric Properties of Pb(Zr1?xTrx)O3 Thin FilmsJournal of Electroceramics, 2004
- The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz regionApplied Physics Letters, 1999
- CAD models for multilayered substrate interdigital capacitorsIEEE Transactions on Microwave Theory and Techniques, 1996
- Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applicationsFerroelectrics, 1990