Sungil Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Sungil Kim has a total of 96 co-authors. Here are the top co-authors by number of shared publications:
Kwang-Yong Kang
Terahertz Research Team Convergence Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea
11 shared publicationsSe Young Jeong
IT Convergence&Components Laboratory , Electronics and Telecomunications Research Institute, 161 Gajeong-Dong , Yuseong-Gu, Daejeon, 305-350, Korea
6 shared publicationsMin Hwan Kwak
Department of Electrical Engineering Changwon Moonsung University Changwon Republic of Korea
5 shared publications- Kwang-Yong Kang
Basic Research Laboratory Electronics and Telecommunications Research Institute , Daejeon, Korea , 305-350
4 shared publications Mun Cheol Paek
IT Convergence&Components Laboratory , Electronics and Telecomunications Research Institute, 161 Gajeong-Dong , Yuseong-Gu, Daejeon, 305-350, Korea
4 shared publicationsMun-Cheol Paek
IT Convergence & Component Laboratory , Electronics and Telecommunications Research Institute, 138 Gajeongro , Yuseong-gu, Daejeon, 305-350, Korea
4 shared publications
Latest Publications
- Open Access
- 6 October 2021
- Published by Wiley in ETRI Journal
- Vol. 43 (5) , 916-922
Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
- 6 October 2021
- Published by Wiley in ETRI Journal
- Vol. 43 (5) , 916-922
Open AccessOptimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
- 24 April 2018
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 60 (6) , 1558-1562
Design and characterization for travelling wave electrodes of high‐speedMach‐Zehnder electro‐optic modulator on an n‐dopedInPsubstrate
Designing a traveling wave electrode (TWE), which feeds a high‐speed electrical signal to modulate an optical signal, is a key issue of high‐speed Mach‐Zehnder electro‐optic modulator (MZM) development fields. In this article, we have presented TWE design and characterization results for an MZM on an n‐type InP substrate operating frequency range from DC to 25 GHz. A coplanar waveguide with ground structure has been adapted to the TWE to overcome lossy characteristics of the n‐type InP substrate and increase noise immunity. The designed results are analyzed as comparing with equivalent circuits extracted by the data, which is measured by a vector network analyzer. Consequently, we hope our results can be helpful in the fields of design and fabrication of high‐speed opto‐electric components.
- 24 April 2018
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 60 (6) , 1558-1562
Design and characterization for travelling wave electrodes of high‐speedMach‐Zehnder electro‐optic modulator on an n‐dopedInPsubstrate
Designing a traveling wave electrode (TWE), which feeds a high‐speed electrical signal to modulate an optical signal, is a key issue of high‐speed Mach‐Zehnder electro‐optic modulator (MZM) development fields. In this article, we have presented TWE design and characterization results for an MZM on an n‐type InP substrate operating frequency range from DC to 25 GHz. A coplanar waveguide with ground structure has been adapted to the TWE to overcome lossy characteristics of the n‐type InP substrate and increase noise immunity. The designed results are analyzed as comparing with equivalent circuits extracted by the data, which is measured by a vector network analyzer. Consequently, we hope our results can be helpful in the fields of design and fabrication of high‐speed opto‐electric components.
- Open Access
- 1 August 2013
- Published by Wiley in ETRI Journal
- Vol. 35 (4) , 578-586
Design and Experiment Results of High-Speed Wireless Link Using Sub-terahertz Wave Generated by Photonics-Based Technology
- 1 August 2013
- Published by Wiley in ETRI Journal
- Vol. 35 (4) , 578-586
Open AccessDesign and Experiment Results of High-Speed Wireless Link Using Sub-terahertz Wave Generated by Photonics-Based Technology
- 22 January 2013
- Published by Springer Nature in Journal of Infrared, Millimeter, and Terahertz Waves
- Vol. 34 (2) , 109-118
A Cost-effective Sub-terahertz Continuous Wave Generation Scheme Using a Broadband Optical Source and An Optical Feedback Loop
- 22 January 2013
- Published by Springer Nature in Journal of Infrared, Millimeter, and Terahertz Waves
- Vol. 34 (2) , 109-118
A Cost-effective Sub-terahertz Continuous Wave Generation Scheme Using a Broadband Optical Source and An Optical Feedback Loop
- 1 June 2012
- Published by Elsevier in Optics Communications
- Vol. 285 (12) , 2905-2910
Sub-THz continuous wave generation scheme using high-order harmonics modulated lightwave
- 1 June 2012
- Published by Elsevier in Optics Communications
- Vol. 285 (12) , 2905-2910
Sub-THz continuous wave generation scheme using high-order harmonics modulated lightwave
- 8 November 2011
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 29 (24) , 3817-3823
Fixed-Current Operation of a VCSEL Transmitter Over a Temperature Range From ${-} 20^{\circ}$C to 80$^{\circ}$C Using an Elevated-Oxide-Layer Structure
We have demonstrated fixed-current operation of a vertical-cavity surface-emitting laser (VCSEL) transmitter operating at 1.25 Gb/s over a wide temperature range by using an elevated-oxide-layer structure. Four different types of oxide VCSELs have been prepared for the transmitter modules; conventional-oxide and elevated-oxide-layer VCSELs with the oxide-aperture diameter of 6.6 and 10 μm, and their temperature dependence of the threshold current and turn-off transient responses have been measured. Approximately 10%-reduced both fall time and timing jitter mainly originating from the alleviated turn-off-induced abnormalities in the elevated-oxide-layer VCSEL transmitters contributed to achieve the fixed-current operation in the temperature range from 20 °C to 80 °C. Although the operating current of the elevated-oxide-layer VCSEL transmitter should be increased as the threshold current increases, a simple driving circuit owing to the fixed-current operating transmitter over a wide temperature range will bring a drastic energy saving in the optical data transmission system that incorporates VCSEL as a light source.
- 8 November 2011
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 29 (24) , 3817-3823
Fixed-Current Operation of a VCSEL Transmitter Over a Temperature Range From ${-} 20^{\circ}$C to 80$^{\circ}$C Using an Elevated-Oxide-Layer Structure
We have demonstrated fixed-current operation of a vertical-cavity surface-emitting laser (VCSEL) transmitter operating at 1.25 Gb/s over a wide temperature range by using an elevated-oxide-layer structure. Four different types of oxide VCSELs have been prepared for the transmitter modules; conventional-oxide and elevated-oxide-layer VCSELs with the oxide-aperture diameter of 6.6 and 10 μm, and their temperature dependence of the threshold current and turn-off transient responses have been measured. Approximately 10%-reduced both fall time and timing jitter mainly originating from the alleviated turn-off-induced abnormalities in the elevated-oxide-layer VCSEL transmitters contributed to achieve the fixed-current operation in the temperature range from 20 °C to 80 °C. Although the operating current of the elevated-oxide-layer VCSEL transmitter should be increased as the threshold current increases, a simple driving circuit owing to the fixed-current operating transmitter over a wide temperature range will bring a drastic energy saving in the optical data transmission system that incorporates VCSEL as a light source.
- 1 July 2011
- Published by Elsevier in Current Applied Physics
- Vol. 11 (4) , 1107-1110
Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition
- 1 July 2011
- Published by Elsevier in Current Applied Physics
- Vol. 11 (4) , 1107-1110
Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition
- 1 January 2011
- Published by Taylor & Francis in Ferroelectrics
- Vol. 422 (1) , 19-22
Dielectric Characteristics of Pb(Zr, Ti)O3Films on MgO Single Crystal Substrate by Terahertz Time Domain Spectroscopy
Lead zirconium titanate (PbZr0.52Ti0.48 O3 and PbZr0.30Ti0.70O3) films were prepared on MgO (100) substrate by the sol-gel method. Film Thickness, microstructure and crystalline structure of the films were investigated by scanning electron microscope (SEM) and X-ray diffraction analysis, respectively. Terahertz time-domain spectroscopy has been used to investigate the dielectric properties of ferroelectric Pb(Zr, Ti)O3 thin films in the frequency range of 0.2 to 2.0 THz.
- 1 January 2011
- Published by Taylor & Francis in Ferroelectrics
- Vol. 422 (1) , 19-22
Dielectric Characteristics of Pb(Zr, Ti)O3Films on MgO Single Crystal Substrate by Terahertz Time Domain Spectroscopy
Lead zirconium titanate (PbZr0.52Ti0.48 O3 and PbZr0.30Ti0.70O3) films were prepared on MgO (100) substrate by the sol-gel method. Film Thickness, microstructure and crystalline structure of the films were investigated by scanning electron microscope (SEM) and X-ray diffraction analysis, respectively. Terahertz time-domain spectroscopy has been used to investigate the dielectric properties of ferroelectric Pb(Zr, Ti)O3 thin films in the frequency range of 0.2 to 2.0 THz.
- 1 January 2011
- Published by Taylor & Francis in Ferroelectrics
- Vol. 422 (1) , 14-18
Synthesis and Characterization of Sodium Tungsten Oxide (NaxWO3, 0 <x< 1) Nanobundles
Sodium tungsten oxide nanobundles are synthesized by acid precipitation method with the ammonium tungstate and sodium hydroxide. The crystal structure, morphology and optical properties of the sodium tungsten oxide (NaxWO3, x = 0.33, 0.5, 0.75, and 1.0) nanobundles are analyzed by X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectroscopy, respectively.
- 1 January 2011
- Published by Taylor & Francis in Ferroelectrics
- Vol. 422 (1) , 14-18
Synthesis and Characterization of Sodium Tungsten Oxide (NaxWO3, 0 <x< 1) Nanobundles
Sodium tungsten oxide nanobundles are synthesized by acid precipitation method with the ammonium tungstate and sodium hydroxide. The crystal structure, morphology and optical properties of the sodium tungsten oxide (NaxWO3, x = 0.33, 0.5, 0.75, and 1.0) nanobundles are analyzed by X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectroscopy, respectively.