The Electrical Activity of Dislocation in the Presence of Transition Metal Contaminants
Authors:
- P. R. WilshawPWP. R. Wilshaw
- T. S. FellTFT. S. Fell
- 1 January 1991
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
- p. 77-83
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Gettering of Copper to Oxidation Induced Stacking Faults in SiliconPhysica Status Solidi (a), 1990
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981
- The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type siliconPhysica Status Solidi (a), 1979