Solid phase epitaxy of diamond cubic SnxGe1−x alloys
Authors:
- 15 October 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (8) , 4384-4388
Abstract
Solid phase epitaxy of amorphous SnxGe1−x films on strain relieved Ge films on Si(001) substrates was investigated for alloy compositions in the range 0.02≤x≤0.26. Films with compositions xxGe1−x films with x∼0.05, and excess Sn is segregated in ∼100 nm size domains within the epitaxial alloy film.Keywords
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