Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Authors:
- 15 August 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (4) , 1983-1986
Abstract
Electrical characterization of AlN/GaN interfaces was carried out by the capacitance–voltage (C–V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C–V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1×1011 cm−2 eV−1 or less around the energy position of Ec−0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C–V characteristics.Keywords
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