1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
- 14 January 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (3) , 357-359
Abstract
We demonstrate high-voltage depletion-mode and enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs) on a GaN-on-silicon-on-insulator (SOI) platform. The GaN-on-SOI wafer features GaN epilayers grown by metal-organic chemical vapor deposition on a p-type (111) Si SOI substrate with a p-type (100) Si handle wafer. Micro-Raman spectroscopy significantly reveals reduced stress in the GaN epilayers, which is a result expected from the compliant SOI substrate. E-mode HEMTs fabricated by fluorine plasma implantation technique deliver high on/off current ratio (108-109), large breakdown voltage (1471 V with floating substrate), and low on-resistance (3.92 mΩ·cm2).Keywords
This publication has 10 references indexed in Scilit:
- Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si DevicesIEEE Electron Device Letters, 2012
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin FilmIEEE Electron Device Letters, 2012
- Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technologyPhysica Status Solidi (a), 2010
- Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substratesElectronics Letters, 2010
- Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si PlatformIEEE Electron Device Letters, 2009
- Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTsIEEE Electron Device Letters, 2009
- Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device SimulationIEEE Transactions on Electron Devices, 2007
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor depositionJournal of Applied Physics, 1998
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994