Secondary emission studies of hot carrier relaxation in polar semiconductors
Authors:
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 419-424
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electron-phonon interactions in indium gallium arsenideSemiconductor Science and Technology, 1987
- Direct Subpicosecond Measurement of Carrier Mobility of Photoexcited Electrons in Gallium ArsenidePhysical Review Letters, 1987
- Picosecond Raman studies of the Fröhlich interaction in semiconductor alloysPhysical Review Letters, 1987
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAsPhysical Review Letters, 1985
- Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scatteringPhysical Review B, 1984
- Temperature dependence of longitudinal optical phonon lifetimes in GaPSolid State Communications, 1984
- Collective Modes of Photoexcited Electron-Hole Plasmas in GaAsPhysical Review Letters, 1981
- An improved technique for selective etching of GaAs and Ga1−xAlxAsJournal of Applied Physics, 1980
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966