Active Thermal Management for β-Ga2O3 Schottky Barrier Diodes Based on Thermoelectric Coolers

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Abstract
In view of the lower thermal conductivity of β-Ga2O3, effective heat dissipation is crucial for maintaining its high output power and reliability. This study presents an active thermal management model for β-Ga2O3 Schottky barrier diodes (SBDs) using thermoelectric coolers (TECs), employing both experimental and numerical methods. The heat generated by the SBD can be effectively dissipated to the surroundings through the Peltier effect in thermoelectric (TE) materials. Experimental results show that, with a TEC input current of 6 A, the case temperature remains below 25 ∘C even at an SBD output power of 25 W, achieving a maximum junction temperature reduction of 74.5 ∘C compared to when the TEC is off. At a TEC input current of 3 A, the net output power of the SBD reaches 11.8 W, corresponding to an improvement ratio of 36.9%. In simulation, TEC parameters are analyzed to optimize the junction temperature. For every 0.1-mm reduction in the height of TE legs, the junction temperature decreases by 5.3 ∘C. The Seebeck coefficient significantly impacts the junction temperature through co-optimization of material parameters. This work provides guidance for designing and optimizing the thermal management of β-Ga2O3 SBDs with TECs.
Funding Information
  • National Natural Science Foundation of China (U2241220, 62421005)
  • Fundamental Research Funds for the Central Universities (YJSJ25013)
  • fund of National Innovation Center of Radiation Application (KFZC2022020401)
  • National Key Research and Development Program of China (2023YFB3611900)

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