Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector
Authors:
- 15 March 2012
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 41 (10) , 2886-2892
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and $p\hbox{-}n$ Heterojunction DetectorsIEEE Transactions on Electron Devices, 2010
- Use of epitaxial unipolar barriers to block surface leakage currents in photodetectorsphysica status solidi (c), 2010
- Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger suppressionJournal of Physics D: Applied Physics, 2009
- Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectorsElectronics Letters, 2008
- n B n detector, an infrared detector with reduced dark current and higher operating temperatureApplied Physics Letters, 2006
- Numerical Analysis of HgCdTe Simultaneous Two-Color Photovoltaic Infrared DetectorsIEEE Journal of Quantum Electronics, 2006
- Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodesIEEE Transactions on Electron Devices, 2001
- Numerical analysis of longwavelength extracted photodiodesInfrared Physics, 1993
- Minority carrier lifetime in mercury cadmium tellurideSemiconductor Science and Technology, 1993
- Electron Mobility in Hg1−xCdxTeJournal of Applied Physics, 1972