Anne M. Itsuno

We present in this study a theoretical and experimental investigation of the MWIR HgCdTe nBn device concept. Theoretical work has demonstrated that the HgCdTe nBn device is potentially capable of achieving performance equivalent to the ideal double layer planar heterostructure (DLPH) detector. Comparable responsivity, low current denisty J_dark, and high detectivity *D values rival those of the DLPH device without requiring p-type doping. The theoretical results suggests that the HgCdTe nBn structure may be a promising solution for achieving a simplified MWIR device structure and addressing problems associated with reducing thermal generation in conventional p-on-n structures and processing technology limitations such as achieving low, controllable in-situ p-type doping with MBE growth techniques. Furthermore, the physical mechanisms for selective carrier conduction in the nBn structure may provide a basis to incorporate into future device structures to suppress intrinsic Auger carrier generation. Likewise, the experimental demonstration of the MWIR HgCdTe nBn devices introduces a promising potential alternative to conventional high performance p-n junction HgCdTe photodiodes. The experiments described in this study illustrate the successful implementation of a HgCdTe barrier-integrated structure. The measured current-voltage characteristics of planar-mesa and mesa HgCdTe nBn devices exhibit barrier-influenced behavior and follow temperature-dependent trends as predicted by numerical simulations. Optical measurements of the planar-mesa MWIR HgCdTe nBn device indicate a bias-dependent spectral response. Further changes to MWIR HgCdTe nBn layer structure has shown an over 10⁵ A/cm² reduction in J_dark as well as a shift to a lower turn-on operation bias. This experimental investigation highlights the potential for pursuing similar and related unipolar, type-I barrier devices for high performance infrared detector applications.