Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN

Authors:
Open Access
Publisher website
Google Scholar
Abstract
Ultrawide bandgap aluminum nitride (AlN) stands out as a highly attractive material for high-power electronics. However, AlN power devices face performance challenges due to high contact resistivity exceeding 10−1 Ω cm2. In this Letter, we demonstrate achieving a low contact resistivity at the 10−4 Ω cm2 level via refined metallization processes applied directly to n-AlN. The minimum contact resistivity reached 5.82 × 10−4 Ω cm2. Our analysis reveals that the low contact resistance primarily results from the stable TiAlTi/AlN interface, resilient even under rigorous annealing conditions, which beneficially forms a thin Al–Ti–N interlayer, promotes substantial nitrogen vacancies, enhances the net carrier density at the interface, and lowers the contact barrier. This work marks a significant milestone in realizing superior Ohmic contacts for n-type AlN, paving the way for more efficient power electronic and optoelectronic devices.
Funding Information
  • KAUST baseline fund (BAS/1/1626-01-01)
  • KAUST baseline fund (BAS/1/1664-01-01)
  • KAUST Competitive Research Grants (URF/1/4374-01-01)
  • KAUST Competitive Research Grants (URF/1/3437-01-01)
  • KAUST Competitive Research Grants (URF/1/3771-01-01)

This publication has 28 references indexed in Scilit: