Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion Irradiation
- 1 September 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (9) , 5342-5346
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (U2241220)
- Fundamental Research Funds for the Central Universities
- National Key Research (YJSJ26021)
- Development Program of China (2023YFB3611902)
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