In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe 3 Si

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Abstract
This work presents the in situ transmission electron microscopy (TEM) investigation of the solid-phase epitaxy of Ge on cubic Fe 3 Si. Amorphous Ge layers were deposited at room temperature in an ultra-high vacuum growth chamber. Subsequent annealing experiments in the microscope between 200 °C and 500 °C are performed both with slow heating rate and under rapid thermal annealing conditions to observe the amorphous/crystalline phase transition with high spatial resolution and to clarify the crystal lattice alignment during the solid phase epitaxial growth. Time-dependent high-resolution TEM measurements are used to analyse the crystallization kinetics following a square root characteristic. By means of energy-dispersive x-ray spectroscopy in the TEM, Fe diffusion into the crystallized Ge film is detected at higher temperature and the influence on the crystal phase formation of FeGe 2 will be discussed with respect to epitaxial strain and thermal treatments.
Funding Information
  • European Regional Development Fund (2016011843)

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