Differential-Mode Instability Analysis and Gate-Impedance Shaping for Parallel-Connected Medium-Voltage SiC MOSFETs
- 1 November 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 41 (11) , 19066-19078
Abstract
No abstract availableFunding Information
- Advanced Research Projects Agency - Energy
- U.S. Department of Energy (DE-AR0001845)
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