Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
- 16 October 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (6) , 5012-5018
Abstract
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (RON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low RON·Qrr figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic RON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10 -6 -10 2 s, high temperature up to 150 °C, and different load current levels.Keywords
Funding Information
- National Natural Science Foundation of China (51807175)
- Power Electronics Science and Education Development Program of Delta Environmental & Educational Foundation (DREG2017013)
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