Rui Li
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Rui Li has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Kuang Sheng
Zhejiang University
2 shared publications - Shu Yang
University of Science and Technology of China
2 shared publications - Xinke Wu
College of Electrical Engineering, Zhejiang University, Hangzhou, China
2 shared publications - Shaowen Han
College of Electrical Engineering, Zhejiang University, Hangzhou, China
1 shared publication
Latest Publications
- 16 October 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (6) , 5012-5018
Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (RON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low RON·Qrr figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic RON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10 -6 -10 2 s, high temperature up to 150 °C, and different load current levels.
- 16 October 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (6) , 5012-5018
Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (RON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low RON·Qrr figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic RON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10 -6 -10 2 s, high temperature up to 150 °C, and different load current levels.
- 6 June 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (2) , 1044-1053
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
The dynamic on-state resistance (R$_{\text{DSON}}$) behavior of commercial GaN devices is very important for a GaN-based converter. Since the zero voltage switching techniques are popular in high-frequency power conversion, a dynamic R$_{\text{DSON}}$ test board integrating both hard and soft switching test circuits is built in this work. Two types of commercial GaN devices are tested and compared under hard and soft switching conditions by double-pulse and multi-pulse test modes, respectively. It has been found that their dynamic R$_{\text{DSON}}$ exhibit different behaviors depending on the off-state voltage and frequency under hard and soft switching conditions due to different device technologies, which should be taken fully into account for GaN-based converter design and loss estimation. In order to simulate the R$_{\text{DSON}}$ behavior in a steady-state operating converter, a multi-pulse measurement has been implemented, the results of which are compared with that of double-pulse test. Furthermore, the primary trapping mechanisms responsible for dynamic R$_{\text{DSON}}$ increase under different switching conditions are identified and verified by numerical device simulation using Silvaco TCAD tool.
- 6 June 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (2) , 1044-1053
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
The dynamic on-state resistance (R$_{\text{DSON}}$) behavior of commercial GaN devices is very important for a GaN-based converter. Since the zero voltage switching techniques are popular in high-frequency power conversion, a dynamic R$_{\text{DSON}}$ test board integrating both hard and soft switching test circuits is built in this work. Two types of commercial GaN devices are tested and compared under hard and soft switching conditions by double-pulse and multi-pulse test modes, respectively. It has been found that their dynamic R$_{\text{DSON}}$ exhibit different behaviors depending on the off-state voltage and frequency under hard and soft switching conditions due to different device technologies, which should be taken fully into account for GaN-based converter design and loss estimation. In order to simulate the R$_{\text{DSON}}$ behavior in a steady-state operating converter, a multi-pulse measurement has been implemented, the results of which are compared with that of double-pulse test. Furthermore, the primary trapping mechanisms responsible for dynamic R$_{\text{DSON}}$ increase under different switching conditions are identified and verified by numerical device simulation using Silvaco TCAD tool.