Study of gamma radiation resistance of GaN transistors for signal amplifiers of scintillation electromagnetic calorimeter cells

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Abstract
Based on an unconventional application of commercially available power GaN transistors, a voltage-sensitive amplifier circuit was proposed for a scintillation sandwich-type lead-plastic calorimeter cell using SiPMs, intended for detectors operating under high-radiation conditions. The radiation hardness of the selected GaN transistors under gamma irradiation was investigated. Defect formation in the transistor structures was studied using C-V characteristics. The results demonstrate that GaN transistors can serve as a promising element base for scintillation detectors operating in high-luminosity accelerator environments.

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