Dark Current Mechanism Analysis of Large-Area Low-Dark-Current 4H-SiC APDs
- 1 August 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (8) , 5072-5077
Abstract
No abstract availableFunding Information
- Key Technology Research and Development Program of Shandong Province (2025CXPT203)
- National Science and Technology Major Project (2025ZD0616300)
- Natural Science Foundation of Shandong Province (ZR2024QF245)
- Taishan Scholars Program of Shandong Province (tstp20231210)
This publication has 36 references indexed in Scilit:
- Hole capture cross section of the Al acceptor level in 4H-SiCMaterials Today Communications, 2022
- A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodesMaterials Letters, 2022
- Gallium oxide solar-blind ultraviolet photodetectors: a reviewJournal of Materials Chemistry C, 2019
- Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodesSolid-State Electronics, 2019
- A Strategy of Transparent Conductive Oxide for UV Focal Plane Array Detector: Two‐Step Thermodynamic ProcessAdvanced Electronic Materials, 2016
- Poole−Frenkel Effect and Phonon-Assisted Tunneling in GaAs NanowiresNano Letters, 2010
- Physics of Semiconductor Devices2006
- Semiconductor Material and Device Characterization2005
- Analysis and Simulation of Semiconductor Devices1984
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970