Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver
- 28 June 2023
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 44 (8) , 1332-1335
Abstract
In this letter, a vertical GaN power transistor driven by lateral devices fabricated in the same technology is demonstrated. The technology combines a co-integrated large area current aperture vertical electron transistor (CAVET) with high electron mobility transistors (HEMTs) for the realization of the driver on a GaN substrate. The quasi-monolithic integrated driver stage consists of two HEMT devices in a push-pull configuration. The CAVET and HEMTs are characterized, separated, packaged, and measured in a double pulse test setup with inductive load. The voltage signals of the HEMT driver with CAVET are shown in continuous operation up to 5 MHz and extreme duty-cycles. In pulsed operation, switching characteristics and waveforms under load up to 120 V and 4.1 A are shown with turn-on/-off switching times of 17.3/2.8 ns. Finally, this work demonstrates a GaN technology that combines the functional integration of a driver stage with a vertical power transistor and thus opens the pathway to continue lateral GaN power integration in vertical device concepts.Keywords
Funding Information
- German Federal Ministry of Defence (BMVg) through the Project PureGaN
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