Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
- 7 March 2014
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 48 (3) , 392-396
Abstract
Experimental samples of semiconductor heterostructures with GaP1−x N x layers and In1−x − y GaP y N x and GaP y N x As1 − x − y quantum wells are synthesized by molecular beam epitaxy on GaP (001) substrates. The structural properties of the samples are investigated by X-ray diffraction and the molar fraction x of nitrogen in the GaP1 − x N x layers is determined. To compare the structural and optical properties of the samples, the photoluminescence of epitaxial GaP1 − x N x layers and heterostructures with InGaPN and GaPAsN quantum wells with GaPN barriers is studied. The photoluminescence and X-ray diffraction data on the GaP1−x N x samples are compared with parameters calculated within the band anticrossing model. Based on the experimental and calculated data, it is concluded that the hybridization parameter is not constant and depends on the molar fraction of nitrogen.Keywords
This publication has 13 references indexed in Scilit:
- Optical properties of quantum-confined heterostructures based on GaP x N y As1 − x − y alloysSemiconductors, 2011
- Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrixSemiconductors, 2010
- III–V epitaxy on Si for photonics applicationsJournal of Crystal Growth, 2008
- Dilute nitride Ga(NAsP)/GaP‐heterostructures: toward a material development for novel optoelectronic functionality on Si‐substratePhysica Status Solidi (b), 2007
- Application of microsize light‐emitting diode structure for monolithic optoelectronic integrated circuitsPhysica Status Solidi (a), 2007
- Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuitsJournal of Crystal Growth, 2007
- First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP‐material systemphysica status solidi (c), 2006
- Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrateApplied Physics Letters, 2001
- Opto-electronic integrated circuits using the InGaAsP/InP systemOptical and Quantum Electronics, 1988
- Four-channel AlGaAs/GaAs optoelectronic integrated transmitter arrayApplied Physics Letters, 1986