A 220–261 GHz Frequency Multiplier Chain (× 18) With 8-dBm Peak Output Power in 130-nm SiGe
- 10 March 2022
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 32 (7) , 895-898
Abstract
This letter presents a 220–261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two frequency triplers (36–45 and 108–135 GHz), a third-order Chebyshev bandpass filter (36–45 GHz), and a modified Gilbert-cell-based frequency doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of −7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of −7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm 2 (1.35 mm $\times0.43$ mm).Keywords
Funding Information
- German Federal Ministry of Education and Research (13N14635)
This publication has 16 references indexed in Scilit:
- Frequency Multiplication With Adjustable Waveform Shaping Demonstrated at 200 GHzIEEE Transactions on Microwave Theory and Techniques, 2019
- A High-Resolution 220-GHz Ultra-Wideband Fully Integrated ISAR Imaging SystemIEEE Transactions on Microwave Theory and Techniques, 2018
- Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data RateIEEE Journal of Solid-State Circuits, 2018
- A Truly Balanced Q-Band CMOS Frequency Doubler Based on Hybrid Quadrature CouplerIEEE Microwave and Wireless Components Letters, 2017
- A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down OutputIEEE Journal of Solid-State Circuits, 2016
- 235–275 GHz (x16) frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption2014
- A Study of SiGe HBT Signal Sources in the 220–330-GHz RangeIEEE Journal of Solid-State Circuits, 2013
- W-Band Silicon-Based Frequency Synthesizers Using Injection-Locked and Harmonic TriplersIEEE Transactions on Microwave Theory and Techniques, 2012
- Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT TechnologyIEEE Transactions on Microwave Theory and Techniques, 2011
- A 77-GHz SiGe frequency multiplier (×18) for radar transceivers2010