1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints
Authors:
- T.H. NingTNT.H. Ning
- P.W. CookPCP.W. Cook
- R.H. DennardRDR.H. Dennard
- C.M. OsburnCOC.M. Osburn
- S.E. SchusterSSS.E. Schuster
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (2) , 268-275
Abstract
For pt.III see ibid., vol.SC14, no.2, p.255 (1979). An approach is described for determining the hot-electron-limited voltages for silicon MOSFETs of small dimensions. The approach was followed in determining the room-temperature and the 77K hot-electron-limited voltages for a device designed to have a minimum channel length of 1 /spl mu/m. The substrate hot-electron limits were determined empirically from measurements of the emission probabilities as a function of voltage using devices of reentrant geometry. The channel hot-electron limits were determined empirically from measurements of the injection current as a function of voltage and from long-term stress experiments.Keywords
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