Preparation and the Photoelectric Properties of ZnO-SiO2 Films with a Sol–Gel Method Combined with Spin-Coating
Open Access
Abstract
This study explores the fabrication of ZnO-SiO2 composite films on silicon substrates via a sol–gel method combined with spin-coating, followed by annealing at various temperatures. The research aims to enhance the UV emission and photoelectric properties of the films. XRD showed that the prepared ZnO sample has a hexagonal structure. SEM images revealed the formation of ZnO nanorods within a dense SiO2 substrate, ranging from 10 μm to 30 μm in length. Photoluminescent analysis showed that the film exhibited strong UV emission centered at 360 nm. The response time measurements indicated that the optimal photoresponse time was approximately 2.9 s. These results suggest the potential of ZnO-SiO2 films as efficient UV-emitting materials with high photoconductivity and a stably reproducible response under visible light, thereby laying the foundation for their application in advanced optoelectronic devices.Keywords
Funding Information
- National Natural Science Foundation of China (U1704145, 522MS062, YSPTZX202207)
- Hainan Provincial Natural Science Foundation of China (U1704145, 522MS062, YSPTZX202207)
- Innovation Platform for Academicians of Hainan Province (U1704145, 522MS062, YSPTZX202207)
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