In-Situ FTIR Studies of Reactions at the Silicon/Liquid Interface: Wet Chemical Etching of Ultrathin SiO2 on Si(100)
Authors:
- 7 February 2001
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 105 (18) , 3903-3907
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized siliconJournal of Applied Physics, 2000
- Contribution of interface roughness to the infrared spectra of thermally grown silicon dioxide filmsJournal of Applied Physics, 1999
- Initial-induced Oxidation of Si(100)–Physical Review Letters, 1997
- Characterization of Silicon Native Oxide Formed in SC-1, H2O2 and Wet Ozone ProcessesJapanese Journal of Applied Physics, 1997
- In situ infrared characterisation of the interfacial oxide during the anodic dissolution of a silicon electrode in fluoride electrolytesSurface Science, 1996
- In situ FTIR investigation of the electrochemical microstructuring of n-Si(111)Electrochimica Acta, 1996
- In-situ infrared characterization of a chemically oxidized silicon surface dissolving in aqueous hydrofluoric acidSurface Science, 1995
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Photoanodic properties of an n-type silicon electrode in aqueous solutions containing fluoridesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966