2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
Open Access
- 29 April 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of the Electron Devices Society
- Vol. 8 (1) , 499-504
Abstract
2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8x better than that of the conventional MOSFETs with no difference in specific on-resistance.Keywords
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