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  3. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
  4. Publication with shared reference
  5. 10.1109/jeds.2020.2991355
  1. Home
  2. Publications
  3. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
  4. Publication with shared reference
  5. 10.1109/jeds.2020.2991355

Publications with shared reference:

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

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