Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states
Open Access
- 6 February 2021
- journal article
- research article
- Published by Springer Nature in Journal of Computational Electronics
- Vol. 20 (2) , 791-797
Abstract
We carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.Keywords
Funding Information
- Narodowe Centrum Nauki (2013/09/B/ST7/04203)
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