Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Authors:
- Jun MaJMJun Ma
- Xueliang ZhuXZXueliang Zhu
- Ka Ming WongKWKa Ming Wong
- Xinbo ZouXZXinbo Zou
- Kei May LauKLKei May Lau
- 1 May 2013
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 370, 265-268
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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