Stabilizing the ferroelectric phase in HfO2-based films sputtered from ceramic targets under ambient oxygen
- 16 November 2020
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 13 (2) , 912-921
Abstract
The interplay of oxygen concentration and zirconium oxide concentration in thin HfxZr1−xO2 films significantly determines the phase and ferroelectric properties.Keywords
Funding Information
- Bundesministerium für Wirtschaft und Technologie (16IPCEI310)
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