3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Authors:
- Shoichiro ImanishiSIShoichiro Imanishi
- Kiyotaka HorikawaKHKiyotaka Horikawa
- Nobutaka OiNONobutaka Oi
- Satoshi OkuboSOSatoshi Okubo
- Taisuke KageuraTKTaisuke Kageura
- Atsushi HiraiwaAHAtsushi Hiraiwa
- Hiroshi KawaradaHKHiroshi Kawarada
Top Cited Papers
- 13 December 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 40 (2) , 279-282
Abstract
No abstract availableKeywords
Funding Information
- JSPS Grant-in-Aid for Scientific Researc (JP26220903)
- Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development
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