Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots
Authors:
- 6 February 2006
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (6) , 062105
Abstract
We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circular polarization degree of up to 35% for the electroluminescence from InGaAs quantum wells and up to 21% for InGaAs quantum dots. We can clearly attribute the polarization of the emitted photons to the spin alignment in the semimagnetic layer by comparison to results from reference devices (where the ZnMnSe is replaced by ZnSe) and from all-optical measurements.Keywords
This publication has 18 references indexed in Scilit:
- Electrical spin pumping of quantum dots at room temperatureApplied Physics Letters, 2005
- Optically programmable electron spin memory using semiconductor quantum dotsNature, 2004
- Exciton spin relaxation in single semiconductor quantum dotsPhysical Review B, 2003
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Spin Relaxation Quenching in Semiconductor Quantum DotsPhysical Review Letters, 2001
- Ferromagnetic III–V heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
- Injection and detection of a spin-polarized current in a light-emitting diodeNature, 1999
- Quantum Information Processing Using Quantum Dot Spins and Cavity QEDPhysical Review Letters, 1999
- Spin injection into semiconductorsApplied Physics Letters, 1999
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993