Current status of the phase change memory and its future
Author:
- S. LaiSLS. Lai
- 22 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 10.1.1-10.1.4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A novel cell technology using N-doped GeSbTe films for phase change RAM2004
- Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies2003
- An edge contact type cell for Phase Change RAM featuring very low power consumption2003
- OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications2002
- Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memoryJournal of Applied Physics, 1991