Magnetotransport properties of two-dimensional electron gas in AlSb∕InAs quantum well structures designed for device applications

The mobility and the sheet electron density of two-dimensional electron gas in $\mathrm{AlSb}∕\mathrm{InAs}$ quantum well structures optimized for device applications were measured in the temperature range $4.2\mathrm{K}<T<90\mathrm{K}$ . A maximum electron mobility $\mu =3.24\times {10}^5$ was found at $4.2\mathrm{K}$ at a sheet electron density $n_{2D}=1.1\times {10}^{12}{\mathrm{cm}}^{-2}$ . Measurements of the integral quantum Hall and Shubnikov-de Haas oscillations in the temperature range $0.07–9\mathrm{K}$ were also carried out to obtain additional information on the characteristics of the two-dimensional electron gas. The electron effective mass $m^{*}$ and the effective electron $\mathrm{g}$ -factor $g^{*}$ were determined from these measurements and found to be, respectively, $0.032{\mathrm{m}}_0$ and 14.6. The latter is in good agreement with the recent experimental data obtained from cyclotron resonance and titled magnetic-field experiments.