Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface
- 1 April 2005
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 243 (1-4) , 199-203
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2Surface Science, 2004
- Surface morphology of three-dimensional Si islands on Si(001) surfacesSurface Science, 2003
- Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot NucleationJournal of the Electrochemical Society, 2003
- Observation of the nucleation kinetics of Si quantum dots on SiO2 by energy filtered transmission electron microscopyApplied Surface Science, 2003
- Interface Morphology of Thermal-Oxide/Si(001) Studied by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 2002
- Three-dimensional Si islands on Si(001) surfacesPhysical Review B, 2001
- Capacitance–voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidationThin Solid Films, 2000
- Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devicesJournal of Crystal Growth, 2000
- Fast and long retention-time nano-crystal memoryIEEE Transactions on Electron Devices, 1996
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)Japanese Journal of Applied Physics, 1994