Konstantin V. Ignatovich

Institute of Automation and Control Processes

*This is an algorithmically generated author record based on publicly available information.

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Institute of Automation and Control Processes

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Konstantin V. Ignatovich has a total of 36 co-authors. Here are the top co-authors by number of shared publications:

Aleksander A. Saranin
Institute of Automation and Control Processes FEB RAS
10 shared publications
Andrey V. Zotov
Institute of Automation and Control Processes
6 shared publications
V.G. Lifshits
Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia
4 shared publications
K. Oura
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
3 shared publications
M. Katayama
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
3 shared publications
O. Kubo
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
3 shared publications

Latest Publications

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- 1 March 2016
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
Characterization of In/Si(111) System by Optical Second-Harmonic Generation
by Konstantin V. Ignatovich, Andrey V. Zotov, Aleksandr A. Saranin
We investigated the change of optical second harmonic generation (SHG) intensity during In/Si (111) interface formation. It was proved that Si (111)2×2-In reconstruction is formed by one monolayer of In on silicon surface.
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- 1 March 2016
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
Characterization of In/Si(111) System by Optical Second-Harmonic Generation
by Konstantin V. Ignatovich, Andrey V. Zotov, Aleksandr A. Saranin
We investigated the change of optical second harmonic generation (SHG) intensity during In/Si (111) interface formation. It was proved that Si (111)2×2-In reconstruction is formed by one monolayer of In on silicon surface.
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Cited by 1
- 1 March 2012
- Published by Elsevier in Applied Surface Science
Characterization of Si(111)√3×√3-(Au,In) surface by optical second-harmonic generation
by K.V. Ignatovich, A.V. Zotov, A.A. Saranin
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- 1 March 2012
- Published by Elsevier in Applied Surface Science
Characterization of Si(111)√3×√3-(Au,In) surface by optical second-harmonic generation
by K.V. Ignatovich, A.V. Zotov, A.A. Saranin
Cited by 1
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Cited by 8
- 1 April 2005
- Published by Elsevier in Applied Surface Science
Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface
by A.A. Saranin, A.V. Zotov, V.G. Kotlyar, O.A. Utas, K.V. Ignatovich, T.V. Kasyanova, Y.S. Park, W.J. Park
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- 1 April 2005
- Published by Elsevier in Applied Surface Science
Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface
by A.A. Saranin, A.V. Zotov, V.G. Kotlyar, O.A. Utas, K.V. Ignatovich, T.V. Kasyanova, Y.S. Park, W.J. Park
Cited by 8
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Cited by 38
- 1 April 2002
- Published by Elsevier in Surface Science
Initial stages of praseodymium oxide film formation on Si()
by H.-J. Müssig, J. Da̧browski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.J. Osten
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- 1 April 2002
- Published by Elsevier in Surface Science
Initial stages of praseodymium oxide film formation on Si()
by H.-J. Müssig, J. Da̧browski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.J. Osten
Cited by 38
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Cited by 1
- 1 November 2001
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
by Hans Joachim Müssig, Jaroslaw Dąbrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.J. Osten
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- 1 November 2001
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
by Hans Joachim Müssig, Jaroslaw Dąbrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.J. Osten
Cited by 1
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Cited by 45
- 8 March 2000
- Published by Elsevier in Surface Science
Restructuring process of the Si(111) surface upon Ca deposition
by A.A. Saranin, V.G. Lifshits, K.V. Ignatovich, H. Bethge, R. Kayser, H. Goldbach, A. Klust, J. Wollschläger, M. Henzler
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- 8 March 2000
- Published by Elsevier in Surface Science
Restructuring process of the Si(111) surface upon Ca deposition
by A.A. Saranin, V.G. Lifshits, K.V. Ignatovich, H. Bethge, R. Kayser, H. Goldbach, A. Klust, J. Wollschläger, M. Henzler
Cited by 45
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Cited by 5
- 1 June 1998
- Published by Elsevier in Applied Surface Science
New structural model for the Si(111)4×1–In reconstruction
by A.A Saranin, A.V Zotov, K.V Ignatovich, V.G Lifshits, T Numata, O Kubo, H Tani, M Katayama, K Oura
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- 1 June 1998
- Published by Elsevier in Applied Surface Science
New structural model for the Si(111)4×1–In reconstruction
by A.A Saranin, A.V Zotov, K.V Ignatovich, V.G Lifshits, T Numata, O Kubo, H Tani, M Katayama, K Oura
Cited by 5
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Cited by 31
- 1 October 1997
- Published by Elsevier in Surface Science
Structural transformations at room temperature adsorption of In on Si(111)√3 × √3-In surface: LEED-AES-STM study
by A.A. Saranin, A.V. Zotov, T. Numata, O. Kubo, K.V. Ignatovich, V.G. Lifshits, M. Katayama, K. Oura
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- 1 October 1997
- Published by Elsevier in Surface Science
Structural transformations at room temperature adsorption of In on Si(111)√3 × √3-In surface: LEED-AES-STM study
by A.A. Saranin, A.V. Zotov, T. Numata, O. Kubo, K.V. Ignatovich, V.G. Lifshits, M. Katayama, K. Oura
Cited by 31
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Cited by 48
- 15 July 1997
- Published by American Physical Society (APS) in Physical Review B
Structural model for the Si(111)-4 $\times$ 1-In reconstruction
by A. A. Saranin, A.V. Zotov, K. V. Ignatovich, V. G. Lifshits, T. Numata, O. Kubo, H. Tani, M. Katayama, K. Oura
A $π$ -bonded-chain-stacking-fault $(π$ -SF) model is proposed for the Si(111)4 $\times$ 1-In surface structure. The model incorporates 4 $\times$ 1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings while sevenfold Si rings form $π$ -bonded chains between In ridges.
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- 15 July 1997
- Published by American Physical Society (APS) in Physical Review B
Structural model for the Si(111)-4 $\times$ 1-In reconstruction
by A. A. Saranin, A.V. Zotov, K. V. Ignatovich, V. G. Lifshits, T. Numata, O. Kubo, H. Tani, M. Katayama, K. Oura
A $π$ -bonded-chain-stacking-fault $(π$ -SF) model is proposed for the Si(111)4 $\times$ 1-In surface structure. The model incorporates 4 $\times$ 1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings while sevenfold Si rings form $π$ -bonded chains between In ridges.
Cited by 48
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Cited by 6
- 1 April 1997
- Published by Elsevier in Applied Surface Science
4 × 1-Si substrate atoms reconstruction in the Si(111)4 × 1-In structure
by A.A. Saranin, E.A. Khramtsova, K.V. Ignatovich, V.G. Lifshits
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- 1 April 1997
- Published by Elsevier in Applied Surface Science
4 × 1-Si substrate atoms reconstruction in the Si(111)4 × 1-In structure
by A.A. Saranin, E.A. Khramtsova, K.V. Ignatovich, V.G. Lifshits
Cited by 6

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