Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition
- 15 November 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (10) , 6061-6063
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- STM and Raman study of the evolution of the surface morphology in μc-Si:HJournal of Non-Crystalline Solids, 1996
- Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high-frequency-glow dischargeJournal of Applied Physics, 1995
- In situ spectroellipsometry study of the nucleation and growth of microcrystalline siliconJournal of Applied Physics, 1991
- I n s i t u ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growthJournal of Vacuum Science & Technology B, 1989
- Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of µc-Si:H at -180°CJapanese Journal of Applied Physics, 1983
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited µc-Si:HJapanese Journal of Applied Physics, 1983