Akihisa Matsuda
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Akihisa Matsuda has a total of 10 co-authors. Here are the top co-authors by number of shared publications:
- Michio Kondo
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
7 shared publications - Hiroyuki Fujiwara
Gifu University
3 shared publications - Yasutake Toyoshima
Electrotechnical Laboratory, P. O. Tsukuba-gakuen, Ibaraki 305, Japan
2 shared publications Yoshiyuki Nasuno
2 shared publicationsHitoshi Fukuhori
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
1 shared publicationKazuyuki Ikuta
Joint Research Center for Atomic Technology-National Institute for Advanced Interdisciplinary Research, Tsukuba, Ibaraki 305, Japan
1 shared publication
Latest Publications
- 24 November 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (21) , 4348-4350
Real-time observation of the energy band diagram during microcrystalline silicon p–i interface formation
We have performed real-time infrared attenuated total reflectionspectroscopy to characterize free-carrier absorption during microcrystalline silicon (μc-Si:H) p–i interface formation. In the μc-Si:H i-layer growth on the p layer, a free-carrier concentration in the p layer showed a large variation, in accordance with a built-in potential present at the p/i interface. We demonstrate that real-time observation of the energy band diagram is possible during semiconductorthin-filmgrowth by employing free carriers in a doped layer as a probe.
- 24 November 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (21) , 4348-4350
Real-time observation of the energy band diagram during microcrystalline silicon p–i interface formation
We have performed real-time infrared attenuated total reflectionspectroscopy to characterize free-carrier absorption during microcrystalline silicon (μc-Si:H) p–i interface formation. In the μc-Si:H i-layer growth on the p layer, a free-carrier concentration in the p layer showed a large variation, in accordance with a built-in potential present at the p/i interface. We demonstrate that real-time observation of the energy band diagram is possible during semiconductorthin-filmgrowth by employing free carriers in a doped layer as a probe.
- 20 October 2003
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 12 (4) , S111-S116
Recent developments in the high growth rate technique of device-grade microcrystalline silicon thin film
- 20 October 2003
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 12 (4) , S111-S116
Recent developments in the high growth rate technique of device-grade microcrystalline silicon thin film
- 24 February 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (8) , 1227-1229
Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth
- 24 February 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (8) , 1227-1229
Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth
- 21 October 2002
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (17) , 3155-3157
Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells
- 21 October 2002
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (17) , 3155-3157
Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells
- 28 March 2002
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (7) , 4181-4190
Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry
- 28 March 2002
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (7) , 4181-4190
Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry
- 29 November 1999
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22) , 3515-3517
Low-temperature growth of crystalline silicon on a chlorine-terminated surface
- 29 November 1999
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22) , 3515-3517
Low-temperature growth of crystalline silicon on a chlorine-terminated surface
- 15 November 1996
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (10) , 6061-6063
Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition
- 15 November 1996
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (10) , 6061-6063
Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition