Band-gap narrowing in ordered and disordered semiconductor alloys
Authors:
- 12 February 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (7) , 662-664
Abstract
Either spontaneous or artificial ordering of semiconductor alloys into CuAu‐like, chalcopyrite, or CuPt‐like structures is predicted to be accompanied by a reduction in the direct band gaps relative to the average over the binaries. In this letter calculated results are presented for seven III‐V and II‐VI alloys. We identify the mechanism for this band‐gap narrowing as band folding followed by repulsion between the folded states. The latter is coupled by the non‐zinc‐blende component of the superlattice potential. The same physical mechanism (but to a different extent) is responsible for gap bowing in disordered alloys.Keywords
This publication has 24 references indexed in Scilit:
- Electronic structure and band gap of (GaP)1(InP)1(111) superlatticeSuperlattices and Microstructures, 1989
- Negative spin-orbit bowing in semiconductor alloysPhysical Review B, 1989
- Structural and electronic properties of bulk GaAs, bulk AlAs, and the (GaAs(AlAssuperlatticePhysical Review B, 1988
- Electronic and vibronic structure of the (GaAs(AlAssuperlatticePhysical Review B, 1987
- Interband transitions of thin-layer GaAs/AlAs superlatticesPhysical Review B, 1987
- Self-consistent pseudopotential calculation for the electronic structure of a (InAs(GaAsmonolayer superlatticePhysical Review B, 1987
- First-Principles Calculation of Semiconductor-Alloy Phase DiagramsPhysical Review Letters, 1987
- Self-consistent energy bands and formation energy of the (GaAs(AlAs(001) superlatticePhysical Review B, 1986
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981