Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
Authors:
- Shinji FujiedaSFShinji Fujieda
- Yoshishige MatsumotoYMYoshishige Matsumoto
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9B) , L1665
Abstract
Two types of cubic and hexagonal GaN films were deposited on (001) GaAs substrates. The film structure proved to be controlled by GaAs pretreatments. By performing a N2H4 (hydrazine) pretreatment of GaAs substrates, the GaN films, which were otherwise hexagonal similarly to ordinary films on sapphire substrates, became cubic. A surface cubic nitride layer was found to be formed on the pretreated GaAs by a RHEED (reflection high-energy electron diffraction) observation, which is thought to be the substantial substrate for the following growth of a cubic GaN film.Keywords
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