A compact and versatile cryogenic probe station for quantum device testing

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Abstract
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work, we present a probe station that can be operated from room temperature down to below 2 K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design–fabrication–measurement cycle and provide important feedback for process optimization toward building scalable quantum circuits.
Funding Information
  • National Center of Competence in Research SPIN Spin Qubits in Silicon
  • Georg H. Endress foundation
  • Swiss Nanoscience Institute
  • EU H2020 European Mikrokelvin Platform EMP (824109)

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