D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors

This publication has 33 references indexed in Scilit:

• Effects of total-dose irradiation on gate-all-around (GAA) devices
  IEEE Transactions on Nuclear Science, 1993
• A low-frequency noise study of gate-all-around SOI transistors
  IEEE Transactions on Electron Devices, 1993
• Dual-gate operation and volume inversion in n-channel SOI MOSFET's
  IEEE Electron Device Letters, 1992
• Time-dependent hole and electron trapping effects in SIMOX buried oxides
  IEEE Transactions on Nuclear Science, 1990
• A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers
  IEEE Transactions on Nuclear Science, 1990
• A study of the effects of processing on the response of implanted buried oxides to total dose irradiation
  IEEE Transactions on Nuclear Science, 1990
• Radiation sensitivity of buried oxides
  Journal of Electronic Materials, 1990
• Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
  IEEE Electron Device Letters, 1987
• Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures
  IEEE Transactions on Nuclear Science, 1987
• The Effects of Test Conditions on MOS Radiation-Hardness Results
  IEEE Transactions on Nuclear Science, 1981