Metal oxide semiconductor-based negative capacitance field-effect transistors with a sub-threshold swing of below 30 mV/dec
Authors:
- Ji Hyeon MinJMJi Hyeon Min
- Seong Cheol JangSJSeong Cheol Jang
- Kyong Jae KimKKKyong Jae Kim
- You Seung RimYRYou Seung Rim
- Hyun-Suk KimHKHyun-Suk Kim
Open Access
- 27 September 2025
- journal article
- Published by Elsevier in Materials Today Electronics
- Vol. 14
Abstract
No abstract availableFunding Information
- Korea Ministry of Trade Industry and Energy (RS-2025\u201302308064)
- Korea Ministry of Trade Industry and Energy (RS-2022\u201300155706)
- Korea Ministry of Science and ICT (RS-2025\u201325442614)
- Korea Ministry of Science and ICT (IITP-2025-RS-2024\u201300438007)
- National Research Foundation of Korea
- Korea Evaluation Institute of Industrial Technology
- Institute for Information and Communications Technology Promotion
- Dongguk University (S-2023-G0001\u201300096)
This publication has 51 references indexed in Scilit:
- Intrinsically Photopatternable High‐k Polymer Dielectric for Flexible Electronics (Adv. Funct. Mater. 47/2024)Advanced Functional Materials, 2024
- An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate OxideACS Applied Electronic Materials, 2024
- Inorganic p-Type Tellurium-Based Synaptic Transistors: Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient OperationACS Applied Electronic Materials, 2024
- Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopantsSolid-State Electronics, 2024
- Negative capacitance based phase-transition FET for low power applications: Device-circuit co-designMicroelectronics Journal, 2022
- A review on emerging negative capacitance field effect transistor for low power electronicsMicroelectronics Journal, 2021
- Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistorsMicroelectronics Journal, 2021
- High-kGate Dielectrics for Emerging Flexible and Stretchable ElectronicsChemical Reviews, 2018
- Steep-Slope WSe2 Negative Capacitance Field-Effect TransistorNano Letters, 2018
- A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applicationsPhysica E: Low-dimensional Systems and Nanostructures, 2015