Semiconducting Heusler Compounds beyond the Slater-Pauling Rule
Open Access
- 20 September 2024
- journal article
- research article
- Published by American Physical Society (APS) in PRX Energy
- Vol. 3 (3) , 033006
Abstract
Heusler compounds with semiconducting properties represent an important class of functional materials. Usually, research on these systems is guided by simple electron-counting rules, such as the Slater-Pauling principle. Here, we report on the discovery of Heusler-type semiconductors, significantly deviating from the Slater-Pauling rule. We theoretically predict the occurrence of nonmagnetic semiconducting ground states in various highly off-stoichiometric full-Heusler alloys, where self-substitution leads to a band-gap opening. This unexpected trend is confirmed experimentally by thermoelectric transport measurements on a multitude of samples with up to 20% substitution of and atoms. The band-gap opening leads to an exceptionally large Seebeck coefficient in -type thermoelectrics, previously limited by bipolar conduction and low-density-of-states effective mass. Consequently, our work presents a paradigm to tune the band gap of Heusler compounds by self-substitution and introduces a hitherto unexplored class of semiconductors with exceptional thermoelectric properties, offering significant potential for advancements in energy science and sustainable-energy technologies.
Keywords
Funding Information
- Japan Science and Technology Agency (JPMJMI19A1)
This publication has 126 references indexed in Scilit:
- Discovery of a Slater–Pauling Semiconductor ZrRu1.5Sb with Promising Thermoelectric PropertiesAdvanced Functional Materials, 2022
- Interplay Between Electronic States and Structural Stability in Cation-Deficient VCoSb, NbCoSb, and TaCoSb Half-HeuslersJournal of Electronic Materials, 2022
- Improving thermoelectric performance of Fe2VAl-based Heusler compounds via high-pressure torsionApplied Physics A, 2022
- Magnetic structure, mechanical stability and thermoelectric properties of VTiRhZ (Z = Si, Ge, Sn) quaternary Heusler alloys: first-principles calculationsApplied Physics A, 2021
- Predicting the electronic structure, magnetism, and transport properties of new Co-based Heusler alloysInternational Journal of Energy Research, 2018
- Enhanced Thermoelectric Performance in 18‐Electron Nb0.8CoSb Half‐Heusler Compound with Intrinsic Nb VacanciesAdvanced Functional Materials, 2018
- Influence of Cu Doping on the Electronic Structure and Magnetic Properties of the Mn2VAl Heusler CompoundPhysica Status Solidi (b), 2017
- Electronic structure of the Heusler compound Fe2VAl and its point defects by ab initio calculationsPhysica Status Solidi (b), 2016
- Ab initio investigations of the structural, electronic, and thermoelectric properties of Fe2NbAl-based alloysJournal of Materials Science, 2016
- High Efficiency Half‐Heusler Thermoelectric Materials for Energy HarvestingAdvanced Energy Materials, 2015