CIS module pilot processing applying concurrent rapid selenization and sulfurization of large area thin film precursors
Authors:
- J. PalmJPJ. Palm
- V. ProbstVPV. Probst
- A. BrummerABA. Brummer
- W. StetterWSW. Stetter
- R. TölleRTR. Tölle
- T.P. NiesenTNT.P. Niesen
- S. VisbeckSVS. Visbeck
- O. HernandezOHO. Hernandez
- M. WendlMWM. Wendl
- H. VogtHVH. Vogt
- H. CalwerHCH. Calwer
- B. FreiensteinBFB. Freienstein
- 1 May 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 431-432, 514-522
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cellsThin Solid Films, 2001
- Rapid CIS-process for high efficiency PV-modules: development towards large area processingThin Solid Films, 2001
- Solar cell efficiency tables (version 17)Progress in Photovoltaics: Research and Applications, 2001
- The behaviour of Na implanted into Mo thin films during annealingSolar Energy Materials and Solar Cells, 1999
- Advanced Stacked Elemental Layer Process for Cu(InGa)Se2 Thin Film Photovoltaic DevicesMRS Proceedings, 1996
- Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cellsThin Solid Films, 1995
- The effects of oxygen concentration in sputter-deposited molybdenum filmsThin Solid Films, 1988